BPV23F(l) document number 81510 rev. 1.4, 08-mar-05 vishay semiconductors www.vishay.com 1 94 8633 silicon pin photodiode description BPV23F(l) is a high speed and high sensitive pin photodiode in a plastic package with a spherical side view lens. the epoxy package itself is an ir filter, spectrally matched to gaas or gaas/gaalas ir emit- ters ( p = 950 nm). lens radius and chip position are perfectly matched to the chip size, giving high sensitivity without com- promising the viewing angle. in comparison with flat packages the lens package achieves a sensitivity improvement of 80 %. features ? large radiant sensitive area (a = 5.7 mm 2 ) wide viewing angle ? = 60 improved sensitivity fast response times low junction capacitance plastic package with ir filter filter designed for 950 nm transmission option "l": long lead package optional available with suffix "l"; e.g.: BPV23Fl lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications infrared remote control and free air transmission sys- tems in combination with ir emitter diodes (tsu...- or tsi...-series). absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 55 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient r thja 350 k/w
www.vishay.com 2 document number 81510 rev. 1.4, 08-mar-05 BPV23F(l) vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min ty p. max unit forward voltage i f = 50 ma v f 11.3v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 48 pf serial resistance v r = 12 v, f = 1 mhz r s 900 ? parameter test condition symbol min ty p. max unit open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 390 mv temp. coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 60 a reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 45 63 a temp. coefficient of i ra e e = 1 mw/cm 2 , = 950 nm, v r = 10 v tk ira 0.2 %/k absolute spectral sensitivity v r = 5 v, = 870 nm s( ) 0.35 a/w v r = 5 v, = 950 nm s( )0.6a/w angle of half sensitivity ? 60 deg wavelength of peak sensitivity p 950 nm range of spectral bandwidth 0.5 870 to 1050 nm quantum efficiency = 950 nm 90 % noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz detectivity v r = 10 v, = 950 nm d * 5 x 10 12 cm hz/w rise time v r = 10 v, r l = 1 k ? , = 820 nm t r 70 ns fall time v r = 10 v, r l = 1 k ? , = 820 nm t f 70 ns cut-off frequency v r = 12 v, r l = 1 k ? , = 870 nm f c 4mhz v r = 12 v, r l = 1 k ? , = 950 nm f c 1mhz
BPV23F(l) document number 81510 rev. 1.4, 08-mar-05 vishay semiconductors www.vishay.com 3 typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. reverse dark current vs. ambient temperature figure 2. relative reverse light current vs. ambient temperature figure 3. reverse light current vs. irradiance 20 40 60 80 1 10 100 1000 100 94 8403 v r =10v i - reverse dark current ( na ) ro t amb - ambient temperature ( c) 0. 6 0. 8 1.0 1.2 1.4 94 8 409 i - rel a tive reverse light current r a rel v r =5v = 950 nm t a mb - ambient temper a ture ( c) 100 8 0 6 0 40 20 0 0.01 0.1 1 0.1 1 10 100 1000 i C reverse light current ( a) ra e e C irradiance ( mw/cm 2 ) 10 94 8424 v r =5v = 950 nm figure 4.reverselightcurrentvs.reversevoltage figure 5.diodecapacitancevs.reversevoltage figure 6.relativepectralensitivitvs.wavelength 0.1 1 10 1 10 100 v r C reverse voltage ( v ) 100 94 8425 i C reverse light current ( a) ra 1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 0.1 mw/cm 2 0.05 mw/cm 2 0.02 mw/cm 2 = 950 nm 0.1 1 10 0 20 40 60 80 c C diode capacitance ( pf ) d v r C reverse voltage ( v ) 100 94 8423 e=0 f=1mhz 750 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) C relative spectral sensitivity rel C wavelength ( nm ) 1150 94 8408 1.0
www.vishay.com 4 document number 81510 rev. 1.4, 08-mar-05 BPV23F(l) vishay semiconductors package dimensions in mm 0.4 0.2 0 0.2 0.4 s - relative sensitivity rel 0.6 94 841 3 0.6 0.9 0.8 0 3 0 10 20 40 50 60 70 80 0.7 1.0 figure 7. relative radiant sensitivity vs. angular displacement 9612205
BPV23F(l) document number 81510 rev. 1.4, 08-mar-05 vishay semiconductors www.vishay.com 5 package dimensions in mm 95 11475
www.vishay.com 6 document number 81510 rev. 1.4, 08-mar-05 BPV23F(l) vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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